IndiumV3, Chine, Analysis, bibRecord, 000578

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

Identifieur interne : 000578 ( Chine/Analysis ); précédent : 000577; suivant : 000579

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

Auteurs : RBID : Pascal:12-0410840

Descripteurs français

Pascal (Inist)
- Microstructure, Propriété électrique, Propriété optique, Oxyde d'indium, Oxyde d'étain, Couche mince, Recuit, Vitesse dépôt, Radiofréquence, Dépôt pulvérisation, Courant continu, Pulvérisation haute fréquence, Plan expérience, Densité élevée, 8115C, 6855J.

English descriptors

KwdEn :
- Annealing, Deposition rate, Direct current, Electrical properties, Experimental design, High density, Indium oxide, Microstructure, Optical properties, Radiofrequency, Radiofrequency sputtering, Sputter deposition, Thin films, Tin oxide.

Abstract

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

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Pascal:12-0410840

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films</title>
<author><name>GUISHENG ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
</affiliation>
</author>
<author><name>LI ZHI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
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</author>
<author><name>HUIJUAN YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
</affiliation>
</author>
<author><name>HUARUI XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
</affiliation>
</author>
<author><name>AIBING YU</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Sydney, NSW 2052</s2>
<s3>AUS</s3>
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<country>Australie</country>
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<title level="j" type="abbreviated">J. electron. mater.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Deposition rate</term>
<term>Direct current</term>
<term>Electrical properties</term>
<term>Experimental design</term>
<term>High density</term>
<term>Indium oxide</term>
<term>Microstructure</term>
<term>Optical properties</term>
<term>Radiofrequency</term>
<term>Radiofrequency sputtering</term>
<term>Sputter deposition</term>
<term>Thin films</term>
<term>Tin oxide</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term>
<term>Propriété électrique</term>
<term>Propriété optique</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Couche mince</term>
<term>Recuit</term>
<term>Vitesse dépôt</term>
<term>Radiofréquence</term>
<term>Dépôt pulvérisation</term>
<term>Courant continu</term>
<term>Pulvérisation haute fréquence</term>
<term>Plan expérience</term>
<term>Densité élevée</term>
<term>8115C</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.</div>
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   |texte=   Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films
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Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri